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1/11 december 2003 stGB20NB32LZ stGB20NB32LZ-1 n-channel clamped 20a - d 2 pak/i 2 pak internally clamped powermesh? igbt n polysilicon gate voltage driven n low threshold voltage n low on-voltage drop n high current capability n high voltage clamping feature description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an esd protection. applications n electronic ignition for automotive ordering information type v ces v ce(sat) i c stGB20NB32LZ stGB20NB32LZ-1 clamped clamped < 2.0 v < 2.0 v 20 a 20 a sales type marking package packaging stGB20NB32LZt4 GB20NB32LZ d 2 pak tape&reel stGB20NB32LZ-1 GB20NB32LZ i 2 pak tube 1 3 d 2 pak 1 2 3 i 2 pak internal schematic diagram
stGB20NB32LZ - stGB20NB32LZ-1 2/11 absolute maximum ratings (?)pulse width limited by safe operating area thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) symbol parameter value unit v ces collector-emitter voltage (v gs =0) clamped v v ecr reverse battery protection 20 v v ge gate-emitter voltage clamped v i c collector current (continuous) at t c = 25c 40 a i c collector current (continuous) at t c = 100c 30 a i cm ( ) collector current (pulsed) 80 a eas single pulse energy t c = 25c 700 mj p tot total dissipation at t c =25c 150 w derating factor 1 w/c e sd esd (human body model) 4 kv t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c rthj-case thermal resistance junction-case max 1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w symbol parameter test conditions min. typ. max. unit bv (ces) clamped voltage i c =2ma,v ge = 0, tc= - 40c 330 355 380 v i c =2ma,v ge = 0, tc= 25c 325 350 375 v i c =2ma,v ge = 0, tc= 150c 320 345 370 v bv (ecr) emitter collector break-down voltage i c =75ma,tc=25c 20 28 v bv ge gate emitter break-down voltage i g =2ma 121416 v i ces collector cut-off current (v ge =0) v ce =15v,v ge =0 ,t c =150 c 10 a v ce =200 v, v ge =0 ,t c =150c 100 a i ges gate-emitter leakage current (v ce =0) v ge =10v,v ce = 0 400 660 1000 a r ge gate emitter resistance 10 15 25 k w symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a, tc=-40c 1.2 1.4 2 v v ce =v ge ,i c = 250a, tc= 25c 1v v ce =v ge ,i c = 250a, tc=150c 0.6 v v ce(sat) collector-emitter saturation voltage v ge =4.5v, i c =10a,tc=25c 1.1 1.8 v v ge =4.5v, i c = 10 a, tc= 150c 1 1.7 v v ge =4.5v, i c =20a,tc=25c 1.35 2 v v ge =4.5v, i c = 20 a, tc= 150c 1.25 2 v
3/11 stGB20NB32LZ - stGB20NB32LZ-1 electrical characteristics (t case = 25 c unless otherwise specified) dynamic functional characteristics switching on switching off (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =20 a 35 s c ies input capacitance v ce = 25 v, f = 1 mhz, v ge =0 2300 pf c oes output capacitance 165 pf c res reverse transfer capacitance 28 pf q g gate charge v ce = 280 v, i c =20a, v ge =5v 51 nc symbol parameter test conditions min. typ. max. unit ii latching current r goff =127 w, v clamp =250v, v ge =5v,t c =125c 34 a u.i.s. functional test open secondary coil r goff =1k w ,tc=125c, v g =5v, l = 1.6mh 21.6 a symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc =250v,i c =20a r g =1k w ,v ge = 4.5 v 2.3 0.6 s s (di/dt) on turn-on current slope v cc = 250 v, i c =20a r g =1k w ,v ge = 4.5 v 550 a/s eon turn-on switching losses v cc = 250 v, i c =20a,tc=25c r g =1k w ,v ge = 4.5 v, tc=150c 8.8 9.2 mj mj symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 250 v, i c =20a, r ge =1k w ,v ge = 4.5 v 4.8 s t r (v off ) off voltage rise time 2.6 s t f fall time 2s t d ( off ) off voltage delay time 11.5 s e off (**) turn-off switching loss 11.8 mj t c cross-over time v cc = 250 v, i c =20a, r ge =1k w ,v ge = 4.5 v tc = 150 c 7.8 s t r (v off ) off voltage rise time 3.5 s t f fall time 3.9 s t d ( off ) off voltage delay time 12 s e off (**) turn-off switching loss 17.8 mj
stGB20NB32LZ - stGB20NB32LZ-1 4/11 output characteristics transconductance normalized gate threshold voltage vs temp. transfer characteristics collector-emitter on voltage vs temperature capacitance variations
5/11 stGB20NB32LZ - stGB20NB32LZ-1 dv/dt gate-emitter resistance b vgeo (zener gate-emitter) vs temperature gate charge vs gate-emitter voltage break-down voltage vs emitter resistance normalized breakdown voltage vs temperature self clamped inductive switching energy vs open secondary coil
stGB20NB32LZ - stGB20NB32LZ-1 6/11 b vec reverse battery voltage thermal impedance switching off safe operating area
7/11 stGB20NB32LZ - stGB20NB32LZ-1 fig. 4: gate charge test circuit fig. 3: test circuit for inductive load switching and diode recovery times fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit
stGB20NB32LZ - stGB20NB32LZ-1 8/11 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
9/11 stGB20NB32LZ - stGB20NB32LZ-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stGB20NB32LZ - stGB20NB32LZ-1 10/11 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/11 stGB20NB32LZ - stGB20NB32LZ-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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